Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC857CWE6327BTSA1

BC857CWE6327BTSA1

BC857CWE6327BTSA1

Infineon Technologies

BC857CWE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC857CWE6327BTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC857
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
In-Stock:3386 items

BC857CWE6327BTSA1 Product Details

BC857CWE6327BTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.PG-SOT323-3 is the supplier device package for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BC857CWE6327BTSA1 Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of PG-SOT323-3

BC857CWE6327BTSA1 Applications


There are a lot of Infineon Technologies BC857CWE6327BTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News