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MPS6521G

MPS6521G

MPS6521G

ON Semiconductor

MPS6521G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPS6521G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureLOW NOISE
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating5A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPS6521
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 2mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage25V
Transition Frequency 340MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4V
hFE Min 150
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2587 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.074640$0.07464
500$0.054882$27.441
1000$0.045735$45.735
2000$0.041959$83.918
5000$0.039214$196.07
10000$0.036478$364.78
15000$0.035279$529.185
50000$0.034689$1734.45

MPS6521G Product Details

MPS6521G Overview


DC current gain in this device equals 300 @ 2mA 10V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 4V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As you can see, the part has a transition frequency of 340MHz.A maximum collector current of 100mA volts is possible.

MPS6521G Features


the DC current gain for this device is 300 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 5A
a transition frequency of 340MHz

MPS6521G Applications


There are a lot of ON Semiconductor MPS6521G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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