MJE170STU Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.A collector emitter saturation voltage of -1.7V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.7V @ 600mA, 3A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.As you can see, the part has a transition frequency of 50MHz.Maximum collector currents can be below 3A volts.

MJE170STU Features

the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 50MHz

MJE170STU Applications

There are a lot of ON Semiconductor MJE170STU applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter