MJE18004D2 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 6 @ 2A 1V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 380mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 400mA, 2A.Keeping the emitter base voltage at 12V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).Single BJT transistor contains a transSingle BJT transistorion frequency of 13MHz.The maximum collector current is 5A volts.
MJE18004D2 Features
the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 750mV @ 400mA, 2A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 13MHz
MJE18004D2 Applications
There are a lot of ON Semiconductor MJE18004D2 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
