BC860CE6359HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC860CE6359HTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
330mW
Power - Max
330mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
BC860CE6359HTMA1 Product Details
BC860CE6359HTMA1 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Supplier package SOT-23-3 contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC860CE6359HTMA1 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA the supplier device package of SOT-23-3
BC860CE6359HTMA1 Applications
There are a lot of Infineon Technologies BC860CE6359HTMA1 applications of single BJT transistors.