BCP49E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 10V, an efficient operation can be achieved.There is a transition frequency of 200MHz in the part.The maximum collector current is 500mA volts.
BCP49E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 200MHz
BCP49E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP49E6327HTSA1 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
