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MMBT6428LT1

  • MMBT6428LT1 - MMBT6428LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
  • MMBT6428LT1 - MMBT6428LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

MMBT6428LT1

MMBT6428LT1

Rochester Electronics, LLC

MMBT6428LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MMBT6428LT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
JESD-609 Code e0
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Additional FeatureLOW NOISE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
JEDEC-95 Code TO-236AB
Transition Frequency 100MHz
Collector Current-Max (IC) 0.2A
DC Current Gain-Min (hFE) 250
Collector-Emitter Voltage-Max 50V
RoHS StatusNon-RoHS Compliant
In-Stock:1645 items

MMBT6428LT1 Product Details

MMBT6428LT1 Overview


Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.50V is the maximum collector-emitter voltage setting.

MMBT6428LT1 Features


a transition frequency of 100MHz

MMBT6428LT1 Applications


There are a lot of Rochester Electronics, LLC MMBT6428LT1 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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