BCP5116H6327XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.There is no device package available from the supplier for this product.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.When collector current reaches its maximum, it can reach 1A volts.
BCP5116H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of PG-SOT223-4
BCP5116H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP5116H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
