BCP5116H6433XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCP5116H6433XTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Base Part Number
BCP51
Configuration
Single
Power - Max
2W
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
45V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.31000
$0.31
500
$0.3069
$153.45
1000
$0.3038
$303.8
1500
$0.3007
$451.05
2000
$0.2976
$595.2
2500
$0.2945
$736.25
BCP5116H6433XTMA1 Product Details
BCP5116H6433XTMA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.When collector current reaches its maximum, it can reach 1A volts.
BCP5116H6433XTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP5116H6433XTMA1 Applications
There are a lot of Infineon Technologies BCP5116H6433XTMA1 applications of single BJT transistors.