BCP53-16T3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Parts of this part have transition frequencies of 50MHz.As a result, it can handle voltages as low as 80V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BCP53-16T3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCP53-16T3G Applications
There are a lot of ON Semiconductor BCP53-16T3G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
