PBHV8215Z,115 Overview

DC current gain in this device equals 100 @ 1A 10V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 280mV @ 400mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As a result, it can handle voltages as low as 150V volts.Single BJT transistor comes in a supplier device package of SOT-223.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Collector current can be as low as 2A volts at its maximum.

PBHV8215Z,115 Features

the DC current gain for this device is 100 @ 1A 10V
the vce saturation(Max) is 280mV @ 400mA, 2A
the emitter base voltage is kept at 6V
the supplier device package of SOT-223

PBHV8215Z,115 Applications

There are a lot of Nexperia USA Inc. PBHV8215Z,115 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting