BCX6925E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCX6925E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
3W
Frequency
100MHz
Base Part Number
BCX69
Number of Elements
1
Power Dissipation
3W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.011133
$1.011133
10
$0.953899
$9.53899
100
$0.899905
$89.9905
500
$0.848967
$424.4835
1000
$0.800912
$800.912
BCX6925E6327HTSA1 Product Details
BCX6925E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 500mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a breakdown input voltage of 20V volts that it can take.A maximum collector current of 1A volts can be achieved.
BCX6925E6327HTSA1 Features
the DC current gain for this device is 160 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V
BCX6925E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX6925E6327HTSA1 applications of single BJT transistors.