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BCP54E6327HTSA1

BCP54E6327HTSA1

BCP54E6327HTSA1

Infineon Technologies

BCP54E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP54E6327HTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BCP54
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 45V
Radiation Hardening No
RoHS Status RoHS Compliant
BCP54E6327HTSA1 Product Details

BCP54E6327HTSA1 Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 1A volts.

BCP54E6327HTSA1 Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz

BCP54E6327HTSA1 Applications


There are a lot of Infineon Technologies BCP54E6327HTSA1 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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