BCP54E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCP54E6327HTSA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BCP54
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
45V
Radiation Hardening
No
RoHS Status
RoHS Compliant
BCP54E6327HTSA1 Product Details
BCP54E6327HTSA1 Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 1A volts.
BCP54E6327HTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 100MHz
BCP54E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP54E6327HTSA1 applications of single BJT transistors.