BCP55H6327XTSA1 Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP55H6327XTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCP55H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP55H6327XTSA1 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
