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BC337RL1G

BC337RL1G

BC337RL1G

ON Semiconductor

BC337RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC337RL1G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Contact PlatingCopper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating800mA
Frequency 210MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC337
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product210MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 210MHz
Collector Emitter Saturation Voltage700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:97361 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.400171$0.400171
10$0.377520$3.7752
100$0.356151$35.6151
500$0.335991$167.9955
1000$0.316973$316.973

BC337RL1G Product Details

BC337RL1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.A collector emitter saturation voltage of 700mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 800mA current rating.210MHz is present in the transition frequency.The breakdown input voltage is 45V volts.When collector current reaches its maximum, it can reach 800mA volts.

BC337RL1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 210MHz

BC337RL1G Applications


There are a lot of ON Semiconductor BC337RL1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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