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2N6107G

2N6107G

2N6107G

ON Semiconductor

2N6107G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6107G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -70V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating -7A
Frequency 10MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6107
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 4V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage 70V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.82000 $0.82
50 $0.67700 $33.85
100 $0.55260 $55.26
500 $0.43680 $218.4
1,000 $0.34944 $0.34944
2N6107G Product Details

2N6107G Overview


This device has a DC current gain of 30 @ 2A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3.5V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-7A).There is a transition frequency of 10MHz in the part.During maximum operation, collector current can be as low as 7A volts.

2N6107G Features


the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz

2N6107G Applications


There are a lot of ON Semiconductor 2N6107G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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