2N6107G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6107G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-70V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-7A
Frequency
10MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6107
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
70V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A 4V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage
70V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
3.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.82000
$0.82
50
$0.67700
$33.85
100
$0.55260
$55.26
500
$0.43680
$218.4
1,000
$0.34944
$0.34944
2N6107G Product Details
2N6107G Overview
This device has a DC current gain of 30 @ 2A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3.5V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-7A).There is a transition frequency of 10MHz in the part.During maximum operation, collector current can be as low as 7A volts.
2N6107G Features
the DC current gain for this device is 30 @ 2A 4V a collector emitter saturation voltage of 3.5V the vce saturation(Max) is 3.5V @ 3A, 7A the emitter base voltage is kept at 5V the current rating of this device is -7A a transition frequency of 10MHz
2N6107G Applications
There are a lot of ON Semiconductor 2N6107G applications of single BJT transistors.