BCV47E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCV47E6433HTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCV47
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Power - Max
360mW
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
170MHz
Frequency - Transition
170MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
20,000
$0.04909
$0.9818
BCV47E6433HTMA1 Product Details
BCV47E6433HTMA1 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.In the part, the transition frequency is 170MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCV47E6433HTMA1 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1V @ 100μA, 100mA a transition frequency of 170MHz
BCV47E6433HTMA1 Applications
There are a lot of Infineon Technologies BCV47E6433HTMA1 applications of single BJT transistors.