BCV48E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCV48E6327HTSA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCV48
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Case Connection
COLLECTOR
Power - Max
1W
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
RoHS Status
RoHS Compliant
BCV48E6327HTSA1 Product Details
BCV48E6327HTSA1 Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.A transition frequency of 200MHz is present in the part.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
BCV48E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1V @ 100μA, 100mA a transition frequency of 200MHz
BCV48E6327HTSA1 Applications
There are a lot of Infineon Technologies BCV48E6327HTSA1 applications of single BJT transistors.