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BCW60FNE6393HTSA1

BCW60FNE6393HTSA1

BCW60FNE6393HTSA1

Infineon Technologies

BCW60FNE6393HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCW60FNE6393HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 330mW
Power - Max 330mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 32V
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
BCW60FNE6393HTSA1 Product Details

BCW60FNE6393HTSA1 Overview


This device has a DC current gain of 380 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.This product comes in a SOT-23-3 device package from the supplier.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 100mA volts is possible.

BCW60FNE6393HTSA1 Features


the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the supplier device package of SOT-23-3

BCW60FNE6393HTSA1 Applications


There are a lot of Infineon Technologies BCW60FNE6393HTSA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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