BCW60FNE6393HTSA1 Overview
This device has a DC current gain of 380 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.This product comes in a SOT-23-3 device package from the supplier.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 100mA volts is possible.
BCW60FNE6393HTSA1 Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the supplier device package of SOT-23-3
BCW60FNE6393HTSA1 Applications
There are a lot of Infineon Technologies BCW60FNE6393HTSA1 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
