BCW60FNE6393HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCW60FNE6393HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
330mW
Power - Max
330mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
550mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
380 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage
32V
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
BCW60FNE6393HTSA1 Product Details
BCW60FNE6393HTSA1 Overview
This device has a DC current gain of 380 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.This product comes in a SOT-23-3 device package from the supplier.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 100mA volts is possible.
BCW60FNE6393HTSA1 Features
the DC current gain for this device is 380 @ 2mA 5V the vce saturation(Max) is 550mV @ 1.25mA, 50mA the supplier device package of SOT-23-3
BCW60FNE6393HTSA1 Applications
There are a lot of Infineon Technologies BCW60FNE6393HTSA1 applications of single BJT transistors.