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BCW61BE6327HTSA1

  • BCW61BE6327HTSA1
  • BCW61BE6327HTSA1

BCW61BE6327HTSA1

BCW61BE6327HTSA1

Infineon Technologies

BCW61BE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCW61BE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCW61
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.062662 $0.062662
10 $0.059115 $0.59115
100 $0.055768 $5.5768
500 $0.052612 $26.306
1000 $0.049634 $49.634
BCW61BE6327HTSA1 Product Details

BCW61BE6327HTSA1 Overview


In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Parts of this part have transition frequencies of 250MHz.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.

BCW61BE6327HTSA1 Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 250MHz

BCW61BE6327HTSA1 Applications


There are a lot of Infineon Technologies BCW61BE6327HTSA1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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