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JAN2N3057A

JAN2N3057A

JAN2N3057A

Microsemi Corporation

JAN2N3057A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3057A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AB, TO-46-3 Metal Can
Number of Pins 3
Supplier Device Package TO-46-3
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/391
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 10V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 140V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1578 items

JAN2N3057A Product Details

JAN2N3057A Overview


This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Product comes in TO-46-3 supplier package.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 1A volts is possible.

JAN2N3057A Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-46-3

JAN2N3057A Applications


There are a lot of Microsemi Corporation JAN2N3057A applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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