JAN2N3057A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N3057A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-46-3
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/391
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
140V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3057A Product Details
JAN2N3057A Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Product comes in TO-46-3 supplier package.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 1A volts is possible.
JAN2N3057A Features
the DC current gain for this device is 50 @ 500mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA the supplier device package of TO-46-3
JAN2N3057A Applications
There are a lot of Microsemi Corporation JAN2N3057A applications of single BJT transistors.