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BCX5216E6433HTMA1

BCX5216E6433HTMA1

BCX5216E6433HTMA1

Infineon Technologies

BCX5216E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX5216E6433HTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Supplier Device Package PG-SOT89
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 2W
Base Part Number BCX52
Power - Max 2W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status RoHS Compliant
BCX5216E6433HTMA1 Product Details

BCX5216E6433HTMA1 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Product comes in PG-SOT89 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1A volts.

BCX5216E6433HTMA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of PG-SOT89

BCX5216E6433HTMA1 Applications


There are a lot of Infineon Technologies BCX5216E6433HTMA1 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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