BCX5216E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX5216E6433HTMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Supplier Device Package
PG-SOT89
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Base Part Number
BCX52
Power - Max
2W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
RoHS Compliant
BCX5216E6433HTMA1 Product Details
BCX5216E6433HTMA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Product comes in PG-SOT89 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1A volts.
BCX5216E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the supplier device package of PG-SOT89
BCX5216E6433HTMA1 Applications
There are a lot of Infineon Technologies BCX5216E6433HTMA1 applications of single BJT transistors.