BCX5316E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCX5316E6433HTMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Frequency
125MHz
Base Part Number
BCX53
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
125MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
RoHS Compliant
BCX5316E6433HTMA1 Product Details
BCX5316E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 125MHz.A maximum collector current of 1A volts is possible.
BCX5316E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 125MHz
BCX5316E6433HTMA1 Applications
There are a lot of Infineon Technologies BCX5316E6433HTMA1 applications of single BJT transistors.