PHD13003C,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHD13003C,126 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Power - Max
2.1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 1A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1.5A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.463341
$0.463341
10
$0.437114
$4.37114
100
$0.412372
$41.2372
500
$0.389030
$194.515
1000
$0.367010
$367.01
PHD13003C,126 Product Details
PHD13003C,126 Overview
DC current gain in this device equals 5 @ 1A 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.
PHD13003C,126 Features
the DC current gain for this device is 5 @ 1A 2V the vce saturation(Max) is 1.5V @ 500mA, 1.5A
PHD13003C,126 Applications
There are a lot of WeEn Semiconductors PHD13003C,126 applications of single BJT transistors.