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PHD13003C,126

PHD13003C,126

PHD13003C,126

WeEn Semiconductors

PHD13003C,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHD13003C,126 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1.5A
RoHS StatusRoHS Compliant
In-Stock:2215 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.463341$0.463341
10$0.437114$4.37114
100$0.412372$41.2372
500$0.389030$194.515
1000$0.367010$367.01

PHD13003C,126 Product Details

PHD13003C,126 Overview


DC current gain in this device equals 5 @ 1A 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.

PHD13003C,126 Features


the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A

PHD13003C,126 Applications


There are a lot of WeEn Semiconductors PHD13003C,126 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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