BSB008NE2LXXUMA1

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Manufacturer part number:BSB008NE2LXXUMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 46A 2WDSON

Case Package:SOT-23

Datasheet:BSB008NE2LXXUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-WDSON
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	OptiMOS™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Silver/Nickel (Ag/Ni)
Additional Feature	ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	0.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	16000pF @ 12V
Current - Continuous Drain (Id) @ 25°C	46A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	343nC @ 10V
Rise Time	47.2ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	32.4 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	180A
Drain-source On Resistance-Max	0.0008Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	600 mJ
RoHS Status	ROHS3 Compliant