BSC009NE2LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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BSC009NE2LS5ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
OptiMOS™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 74W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
0.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
3900pF @ 12V
Current - Continuous Drain (Id) @ 25°C
41A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
57nC @ 10V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
25V
Drain Current-Max (Abs) (ID)
41A
Drain-source On Resistance-Max
0.00125Ohm
Pulsed Drain Current-Max (IDM)
400A
Avalanche Energy Rating (Eas)
90 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.83312
$4.1656
10,000
$0.81564
$8.1564
BSC009NE2LS5ATMA1 Product Details
BSC009NE2LS5ATMA1 Description
BSC009NE2LS5ATMA1 is a 25V OptiMOSTM5 Power-MOSFET. The Infineon BSC009NE2LS5ATMA1 can be applied in Desktop and server, Single-phase and multiphase POL, CPU/GPU VR in notebooks, High power density voltage regulator, Or-ing, and E-fuse. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSC009NE2LS5ATMA1 is in the TDSON-8 package with 74W power dissipation.
BSC009NE2LS5ATMA1 Features
Best-in-class on-state resistance
Benchmark switching performance (lowest figure of merits Ron x Qg and Ron x Qgd)