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BSC009NE2LS5ATMA1

BSC009NE2LS5ATMA1

BSC009NE2LS5ATMA1

Infineon Technologies

BSC009NE2LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC009NE2LS5ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 74W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 12V
Current - Continuous Drain (Id) @ 25°C 41A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Drain Current-Max (Abs) (ID) 41A
Drain-source On Resistance-Max 0.00125Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 90 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.83312 $4.1656
10,000 $0.81564 $8.1564
BSC009NE2LS5ATMA1 Product Details

BSC009NE2LS5ATMA1 Description


BSC009NE2LS5ATMA1 is a 25V OptiMOSTM5 Power-MOSFET. The Infineon BSC009NE2LS5ATMA1 can be applied in Desktop and server, Single-phase and multiphase POL, CPU/GPU VR in notebooks, High power density voltage regulator, Or-ing, and E-fuse. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSC009NE2LS5ATMA1 is in the TDSON-8 package with 74W power dissipation. 



BSC009NE2LS5ATMA1 Features


  • Best-in-class on-state resistance

  • Benchmark switching performance (lowest figure of merits Ron x Qg and Ron x Qgd)

  • RoHS compliant and halogen-free

  • Optimized EMI behavior (integrated damping network)

  • Highest efficiency

  • Highest power density with S3O8 or Power Block package



BSC009NE2LS5ATMA1 Applications


  • Desktop and server

  • Single-phase and multiphase POL

  • CPU/GPU VR in notebooks

  • High power density voltage regulator

  • Or-ing

  • E-fuse


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