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BSC010N04LSIATMA1

BSC010N04LSIATMA1

BSC010N04LSIATMA1

Infineon Technologies

BSC010N04LSIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC010N04LSIATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 39 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count8
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 139W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 37A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time48ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage40V
Drain Current-Max (Abs) (ID) 37A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 230 mJ
FET Feature Schottky Diode (Body)
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:1743 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.346880$11.34688
10$10.704604$107.04604
100$10.098683$1009.8683
500$9.527059$4763.5295
1000$8.987792$8987.792

BSC010N04LSIATMA1 Product Details

BSC010N04LSIATMA1 Description

The new 40V and 60V product familiesBSC010N04LSIATMA1 not only have the lowest R DS (conduction) in the industry, but also have perfect switching behavior for fast switching applications. Compared with alternative devices, advanced wafer technology achieves 15% lower RDS (ON) and 31% quality factor (RDS (ON) x Qg) than alternative devices.

BSC010N04LSIATMA1 Features


·Optimized for synchronous rectification Integrated monolithic Schottky-like diode

·Very low on-resistance Ros(on)100% avalanche tested

·N-channel,logic level

Qualified according to JEDEC1for target applications Pb-freeleadpating:RoHScompliant

·Halogen-free accordingtolEC61249-2-21

·Higher solder joint reliability due to enlarged source interconnection

BSC010N04LSIATMA1 Applications


fast switching applications

advanced wafer technology



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