BSC010N04LSIATMA1

new-10%

Manufacturer part number:BSC010N04LSIATMA1

Manufacturer:Infineon Technologies

Description:BSC010N04LSIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC010N04LSIATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 139W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.05m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6200pF @ 20V
Current - Continuous Drain (Id) @ 25°C	37A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	48ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain Current-Max (Abs) (ID)	37A
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	230 mJ
FET Feature	Schottky Diode (Body)
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

Quantity	Unit Price	Ext. Price
1	$11.346880	$11.34688
10	$10.704604	$107.04604
100	$10.098683	$1009.8683
500	$9.527059	$4763.5295
1000	$8.987792	$8987.792

BSC010N04LSIATMA1 Description

The new 40V and 60V product families BSC010N04LSIATMA1 not only have the lowest R DS (conduction) in the industry, but also have perfect switching behavior for fast switching applications. Compared with alternative devices, advanced wafer technology achieves 15% lower RDS (ON) and 31% quality factor (RDS (ON) x Qg) than alternative devices.

BSC010N04LSIATMA1 Features

·Optimized for synchronous rectification Integrated monolithic Schottky-like diode

·Very low on-resistance Ros(on)100% avalanche tested

·N-channel,logic level

Qualified according to JEDEC1for target applications Pb-freeleadpating:RoHScompliant

·Halogen-free accordingtolEC61249-2-21

·Higher solder joint reliability due to enlarged source interconnection