IXTA130N10T7

new-10%

Manufacturer part number:IXTA130N10T7

Manufacturer:IXYS

Description:MOSFET N-CH 100V 130A TO-263-7

Case Package:SOT-23

Datasheet:IXTA130N10T7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchMV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	104nC @ 10V
Rise Time	47ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	130A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.0091Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	350A
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	ROHS3 Compliant