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BSS209PWH6327XTSA1

BSS209PWH6327XTSA1

BSS209PWH6327XTSA1

Infineon Technologies

BSS209PWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSS209PWH6327XTSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -580mA
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 26 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 550m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 3.5μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 115pF @ 15V
Current - Continuous Drain (Id) @ 25°C 630mA Tc
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 4.5V
Rise Time 7ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 580mA
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage -20V
Drain-source On Resistance-Max 0.55Ohm
Feedback Cap-Max (Crss) 45 pF
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.07208 $0.21624
6,000 $0.06334 $0.38004
15,000 $0.05459 $0.81885
30,000 $0.05168 $1.5504
75,000 $0.04876 $3.657
150,000 $0.04293 $6.4395
BSS209PWH6327XTSA1 Product Details

BSS209PWH6327XTSA1 Description


Infineon Technologies' CoolMOSTM 7th generation platform, based on the superjunction (SJ) idea, is a game-changing technology for high-voltage power MOSFETs. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. A fast switching SJ MOSFET with extraordinary ease of operation offers reduced ringing, superior body diode lifespan against harsh commutation, and excellent ESD performance.



BSS209PWH6327XTSA1 Features


?P-Channel


? Mode of enhancement


? Level of Super Logic ( 2.5 V rated)


? Operating temperature of 150°C


? Avalanche danger level



BSS209PWH6327XTSA1 Applications


Switching applications


Related Part Number

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