BSC030P03NS3GAUMA1

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BSC030P03NS3GAUMA1

Manufacturer part number:BSC030P03NS3GAUMA1

Manufacturer:Infineon Technologies

Description:BSC030P03NS3GAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC030P03NS3GAUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.5W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.1V @ 345μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	25.4A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	186nC @ 10V
Rise Time	105ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±25V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	-25.4A
Gate to Source Voltage (Vgs)	25V
Max Dual Supply Voltage	-30V
Drain-source On Resistance-Max	0.0046Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	345 mJ
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead