BSC052N03LSATMA1

new-10%

Manufacturer part number:BSC052N03LSATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 17A 8-Pin TDSON

Case Package:SOT-23

Datasheet:BSC052N03LSATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 28W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	2.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 15V
Current - Continuous Drain (Id) @ 25°C	17A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	3.6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.4 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0072Ohm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead