Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BSC057N08NS3GATMA1

  • BSC057N08NS3GATMA1
  • BSC057N08NS3GATMA1

BSC057N08NS3GATMA1

BSC057N08NS3GATMA1

Infineon Technologies

BSC057N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC057N08NS3GATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 114W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 73μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 40V
Current - Continuous Drain (Id) @ 25°C 16A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0057Ohm
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $1.05511 $5.27555
10,000 $1.03557 $10.3557
BSC057N08NS3GATMA1 Product Details

BSC057N08NS3GATMA1 Description


The BSC057N08NS3GATMA1 is an 80V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. The OptiMOS? MOSFET offers the industry's lowest RDS (on) within the voltage classes. It is ideally suited for high-frequency switching applications and optimized technology for DC-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSC057N08NS3GATMA1 is in the TDSON-8 package with 114W power dissipation.



BSC057N08NS3GATMA1 Features


  • Optimized technology for DC-DC converters

  • Excellent gate charge x R DS(ON) product (FOM)

  • Superior thermal resistance

  • Dual-sided cooling

  • Low parasitic inductance

  • Low profile (<0,7mm)

  • N-channel, normal level

  • 100% avalanche tested

  • Pb-free plating; RoHS compliant



BSC057N08NS3GATMA1 Applications


  • Solar

  • Consumer

  • Telecom

  • Server

  • PC power

  • DC-DC

  • AC-DC

  • Adapter

  • SMPS

  • LED

  • Motor control


Related Part Number

SIHH21N60EF-T1-GE3
Vishay Siliconix
SIHH21N60EF-T1-GE3
$0 $/piece
PSMN2R8-25MLC,115
Nexperia USA Inc.
PSMN2R8-25MLC,115
$0 $/piece
IXTH30N60L2
IXYS
IXTH30N60L2
$0 $/piece
APT8015JVR
Microsemi Corporation
APT8015JVR
$0 $/piece
CSD17483F4
Texas Instruments
CSD17483F4
$0 $/piece
SN7002NH6327XTSA2
Infineon Technologies
SN7002NH6327XTSA2
$0 $/piece
APT20M22JVRU3
Microsemi Corporation
APT20M22JVRU3
$0 $/piece
FQB7N60TM-WS
ON Semiconductor
FQB7N60TM-WS
$0 $/piece
IXFR4N100Q
IXYS
IXFR4N100Q
$0 $/piece
IXFK100N65X2
IXYS
IXFK100N65X2
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News