IXFR4N100Q

new-10%

Manufacturer part number:IXFR4N100Q

Manufacturer:IXYS

Description:MOSFET N-CH 1KV 3.5A ISOPLUS247

Case Package:SOT-23

Datasheet:IXFR4N100Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2002
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	80W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	80W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.5A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	3.5A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	16A
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	ROHS3 Compliant