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SN7002NH6327XTSA2

SN7002NH6327XTSA2

SN7002NH6327XTSA2

Infineon Technologies

SN7002NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SN7002NH6327XTSA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series Automotive, AEC-Q101, SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation360mW
Turn On Delay Time2.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 26μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time3.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 5.3 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage60V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 4.2 pF
Height 1.1mm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18950 items

Pricing & Ordering

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SN7002NH6327XTSA2 Product Details

SPD15P10PLGBTMA1 Description


Infineon's OptiMOSTM series of power MOSFETs includes P-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key criteria for power system design, such as on-state resistance and figure of merit characteristics. This product is designed for general use and can be used to a variety of settings.



SPD15P10PLGBTMA1 Features


  • N-Channel

  • Mode of enhancement

  • Level of Logic

  • dv/dt

  • According to AEC Q101, you are qualified.



SPD15P10PLGBTMA1 Applications


Switching applications


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