CSD17483F4

new-10%

Manufacturer part number:CSD17483F4

Manufacturer:Texas Instruments

Description:CSD17483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD17483F4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17483
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	3.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.5A Ta
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 4.5V
Rise Time	1.3ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	10.6 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.55Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	5A
Height	350μm
Length	1.035mm
Width	635μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free