SIS903DN-T1-GE3

new-10%

Manufacturer part number:SIS903DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SIS903DN-T1-GE3 - Dual MOSFET, Dual P Channel, -6 A, -20 V, 0.0167 ohm, -4.5 V, -1 V

Case Package:SOT-23

Datasheet:SIS903DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen III
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	2.6W Ta 23W Tc
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2565pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Drain to Source Voltage (Vdss)	20V
FET Feature	Standard
RoHS Status	ROHS3 Compliant