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IRLR3636PBF

  • IRLR3636PBF
  • IRLR3636PBF

IRLR3636PBF

IRLR3636PBF

Infineon Technologies

IRLR3636PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR3636PBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 6.8MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 143W Tc
Element Configuration Single
Power Dissipation 143W
Turn On Delay Time 45 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Rise Time 216ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 96 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 99A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
IRLR3636PBF Product Details

IRLR3636PBF Description


IRLR3636PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 50V. The operating temperature of IRLR3636PBF is -55°C~175°C TJ and its maximum power dissipation is 143W. IRLR3636PBF has 3 pins and it is available in Tube packaging way. The Turn-On Delay Time of IRLR3636PBF is 45 ns and its Turn-Off Delay Time is 43 ns.



IRLR3636PBF Features


  • Optimized for Logic Level Drive

  • Very Low RDS(ON) at 4.5V VGS

  • Superior R*Q at 4.5V VGS

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free



IRLR3636PBF Applications


  • DC Motor Drive

  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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