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BSF077N06NT3GXUMA1

BSF077N06NT3GXUMA1

BSF077N06NT3GXUMA1

Infineon Technologies

MOSFET N-CH 60V 13A WDSON-2

SOT-23

BSF077N06NT3GXUMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 3-WDSON
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-MBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 33μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 30V
Current - Continuous Drain (Id) @ 25°C 13A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 13A
Drain-source On Resistance-Max 0.0077Ohm
Pulsed Drain Current-Max (IDM) 224A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 150 mJ

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