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IRF6893MTRPBF

IRF6893MTRPBF

IRF6893MTRPBF

Infineon Technologies

MOSFET N-CH 25V 29A MX

SOT-23

IRF6893MTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET®
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 2.1W Ta 69W Tc
Power Dissipation 2.1W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 13V
Current - Continuous Drain (Id) @ 25°C 29A Ta 168A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 83ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 25V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,800 $1.51783 $6.07132

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