HN4K03JUTE85LF

new-10%

Manufacturer part number:HN4K03JUTE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch Sm Sig FET 0.1A 120V 10V VGSS

Case Package:SOT-23

Datasheet:HN4K03JUTE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	5-TSSOP, SC-70-5, SOT-353
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Number of Channels	2
Power Dissipation-Max	200mW Ta
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	160 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12 Ω @ 10mA, 2.5V
Input Capacitance (Ciss) (Max) @ Vds	8.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C	100mA Ta
Drive Voltage (Max Rds On,Min Rds On)	2.5V
Vgs (Max)	10V
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	1.5V
Drain Current-Max (Abs) (ID)	0.1A
Drain to Source Breakdown Voltage	20V
RoHS Status	RoHS Compliant