BSM10GP120BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM10GP120BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
100W
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
20A
Turn On Time
95 ns
Vce(on) (Max) @ Vge, Ic
2.85V @ 15V, 10A
Turn Off Time-Nom (toff)
345 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
600pF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$78.09200
$780.92
BSM10GP120BOSA1 Product Details
BSM10GP120BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.