MIXA80WB1200TEH

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Manufacturer part number:MIXA80WB1200TEH

Manufacturer:IXYS

Description:IGBT MODULE 1200V 120A 390W E3

Case Package:SOT-23

Datasheet:MIXA80WB1200TEH Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	24
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	390W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	35
JESD-30 Code	R-XUFM-X24
Qualification Status	Not Qualified
Number of Elements	7
Configuration	Three Phase Inverter with Brake
Power Dissipation	390W
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	120A
Current - Collector Cutoff (Max)	200μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.2kV
Turn On Time	110 ns
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 77A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
VCEsat-Max	2.1 V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free