DF450R12N2E4PB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DF450R12N2E4PB11BPSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$109.59700
$1095.97
DF450R12N2E4PB11BPSA1 Product Details
DF450R12N2E4PB11BPSA1 Description
The DF450R12N2E4PB11BPSA1 is an IGBT Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
DF450R12N2E4PB11BPSA1 Features
Wide input voltage range, as boosters are included
Reactive power capability is supported Simple assembly due to PressFIT pins (solderable)
Modular solution tailored for most inverter designs