FZ1000R33HE3C1NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1000R33HE3C1NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C TJ
Part Status
Active
Configuration
Single Switch
Power - Max
1600000W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
1kA
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 1kA
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
190nF @ 25V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$99999.99999
$99999.99999
500
$98999.9999901
$49499999.99505
1000
$97999.9999902
$97999999.9902
1500
$96999.9999903
$145499999.98545
2000
$95999.9999904
$191999999.9808
2500
$94999.9999905
$237499999.97625
FZ1000R33HE3C1NOSA1 Product Details
FZ1000R33HE3C1NOSA1 Description
IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.
FZ1000R33HE3C1NOSA1 Features
? Electrical features
- VCES = 3300 V
- IC nom = 1000 A / ICRM = 2000 A
- Unbeatable robustness
- High DC stability
- High short-circuit capability
- Low switching losses
- Low VCE,sat
- Tvj,op = 150°C
- VCE,sat with positive temperature coefficient
? Mechanical features
- AlSiC base plate for increased thermal cycling capability