BSM400GA120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM400GA120DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X5
Number of Elements
1
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
2700W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
8mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
550A
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 400A
Turn Off Time-Nom (toff)
630 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
26nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$182.62100
$1826.21
BSM400GA120DN2HOSA1 Product Details
BSM400GA120DN2HOSA1 Description
The BSM400GA120DN2HOSA1 is an IGBT Power Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc. Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch. Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high-power applications.