FZ1600R17KF6CB2NOSA1 Description

FZ1600R17KF6CB2NOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 3300V from Infineon Technologies. FZ1600R17KF6CB2NOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1000A. The FZ1600R17KF6CB2NOSA1 has 7 pins and it is available in Module packaging way. FZ1600R17KF6CB2NOSA1 has a 3300V Voltage - Collector Emitter Breakdown (Max) value.

FZ1600R17KF6CB2NOSA1 Features

• Voltage - Collector Emitter Breakdown (Max): 3300V

• Collector Emitter Voltage (VCEO): 3.3kV

• Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A

• Input Capacitance (Cies) @ Vce: 190nF @ 25V

• Operating Temperature: -40°C~150°C

FZ1600R17KF6CB2NOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial