HGT1N30N60A4D Description

HGT1N30N60A4D is a type of MOS gated high voltage switching device optimized for high-frequency switch mode power supplies. It combines the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. Based on its specific characteristics, the HGT1N30N60A4D IGBT is able to provide optimum performance for many high-voltage switching applications operating at high frequencies where low conduction losses are essential. 

HGT1N30N60A4D Features

Package: SOT-227

100kHz operation at 390V, 20A

600V switching SOA capability

Low conduction loss

High input impedance

HGT1N30N60A4D Applications

High voltage switching applications