BSO211PNTMA1

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Manufacturer part number:BSO211PNTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET P-CH 20V 4.7A 8-Pin DSO

Case Package:SOT-23

Datasheet:BSO211PNTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation	2W
Terminal Form	GULL WING
Base Part Number	BSO211
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	7.8 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	67m Ω @ 4.7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	23.9nC @ 4.5V
Rise Time	10.6ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	23.3 ns
Turn-Off Delay Time	26.3 ns
Continuous Drain Current (ID)	4.7A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.067Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	RoHS Compliant