SQJB70EP-T1_GE3

new-10%

Manufacturer part number:SQJB70EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2 N-CH 100V POWERPAK SO8

Case Package:SOT-23

Datasheet:SQJB70EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	2
Power Dissipation	27W
Turn On Delay Time	9 ns
Power - Max	27W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	220pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.3A Tc
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Drain to Source Voltage (Vdss)	100V
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	11.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	175°C
FET Feature	Standard
Drain to Source Resistance	78mOhm
Height	1.267mm
RoHS Status	ROHS3 Compliant