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TSM110NB04DCR RLG

TSM110NB04DCR RLG

TSM110NB04DCR RLG

Taiwan Semiconductor Corporation

DUAL N-CHANNEL POWER MOSFET 40V,

SOT-23

TSM110NB04DCR RLG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFN (5x6)
Operating Temperature -55°C~155°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W Ta 48W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1506pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 40V
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.72000 $2.72
500 $2.6928 $1346.4
1000 $2.6656 $2665.6
1500 $2.6384 $3957.6
2000 $2.6112 $5222.4
2500 $2.584 $6460

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